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On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers

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This paper deals with the determination of the interface density of states in amorphous silicon-based multilayers. Photothermal deflection spectroscopy is used to characterize two series of aSi:H/aSi1-xCx:H multilayers, and a new approach in the treatment of experimental dada is used in order to obtain accurate results. From this approach, an upper limit of 10^10 cm-2 is determined for the interface density of states.

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Articles publicats en revistes (Física Aplicada)

# metadata.dc.title[].value
On the determination of the interface density of states in a-Si:H/a-SiC:H multilayers