# name
Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory

# metadata.dc.description.abstract[].value
A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise induced
by the diffusion of carriers through the semiconductor and the noise induced by the thermionic
emission of carriers across the metal¿semiconductor interface. Closed analytical formulas are
derived for the junction resistance, series resistance, and contributions to the net noise localized in
different space regions of the diode, all valid in the whole range of applied biases. An additional
contribution to the voltage-noise spectral density is identified, whose origin may be traced back to
the cross correlation between the voltage-noise sources associated with the junction resistance and
those for the series resistance. It is argued that an inclusion of the cross-correlation term as a new
element in the existing equivalent circuit models of Schottky diodes could explain the discrepancies
between these models and experimental measurements or Monte Carlo simulations.

# metadata.dc.source[].value
Articles publicats en revistes (Física de la Matèria Condensada)

# metadata.dc.title[].value
Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory