# name
Determination of the electron density in GaAs/AlxGa1-xAs heterostructures

# metadata.dc.description.abstract[].value
An optimized self-consistent method for determination of the quantal electron density is presented. It is applied, in the zero-temperature case, to devices with either partial or full donor ionization. A Thomas-Fermi approximation for the T=0 limit is developed and shown to be appropriate for systematic studies of the two-dimensional electron density, 
σ
−
. A suitable linear approximation is found that provides simple and accurate analytic expressions for 
σ
−
 in terms of the physical parameters of the device.

# metadata.dc.relation.isformatof[].value
Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.49.13750

# metadata.dc.source[].value
Articles publicats en revistes (Física Quàntica i Astrofísica)

# metadata.dc.title[].value
Determination of the electron density in GaAs/AlxGa1-xAs heterostructures