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High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy

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We report on properties of high quality 60 nm thick InAlN layers nearly in-plane lattice-matched to GaN, grown on c-plane GaN-on-sapphire templates by plasma-assisted molecular beam epitaxy. Excellent crystalline quality and low surface roughness are confirmed by X-ray diffraction, transmission electron microscopy, and atomic force microscopy. High annular dark field observations reveal a periodic in-plane indium content variation (8 nm period), whereas optical measurements evidence certain residual absorption below the band-gap. The indium fluctuation is estimated to be 61.2% around the nominal 17% indium content via plasmon energy oscillations assessed by electron energy loss spectroscopy with sub-nanometric spatial resolution.

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(c) American Institute of Physics , 2011

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Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

# metadata.dc.title[].value
High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy