# name
EFTEM-HRTEM characterization of Er-doped silicon nanocrystal-based oxides/nitrides for MOS light emitting devices

# metadata.dc.description[].value
Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Any: 2014, Tutores: Francesca Peiró Martínez i Sonia Estradé Albiol

# metadata.dc.description.abstract[].value
Er-doped silicon nanocrystal-based oxides/nitrides have been investigated. These layers are grown between a
polycrystalline silicon electrode and a monocrystalline silicon substrate to allow electrical injection. Energy Filtered (EF-)
and High Resolution (HR-) TEM characterization has been performed to provide microscopic insight onto the macroscopic
optoelectronic properties of the samples. Evident Er-clustering has been observed in silicon dioxides but not in silicon
nitrides, suggesting a better Er solubility and local environment when nitrogen is incorporated. Silicon nanocrystals have
been observed in silicon-rich nitride layers, as expected, but also in a region close to the silicon dioxide-polysilicon
interface in a layer with no nitrogen or Si excesses. This unexpected Si clusterization has been attributed to Si diffusion
from the polycrystalline silicon electrode into the silicon dioxide as a consequence of the annealing treatment. The
structural characterization carried out by HRTEM and EFTEM has been correlated with the optoelectronic properties of the
devices.

# metadata.dc.title[].value
EFTEM-HRTEM characterization of Er-doped silicon nanocrystal-based oxides/nitrides for MOS light emitting devices