# name
Enhanced Selective Contact Behavior in a-Si:H/oxide Transparent Photovoltaic Devices via Dipole Layer Integration

# metadata.dc.description.abstract[].value
Transparent photovoltaic (TPV) devices have the potential to revolutionize
photovoltaic (PV) technology by enabling on-site generation while minimizing
visual impact. However, a major challenge in the development of TPV, as well as
for many PV technologies, is the open-circuit voltage (Voc) deficit, which limits
their efficiency. In this work, the development of wide-bandgap inorganic-based
TPV devices is reported with a focus on low-cost, earth-abundant, stable, and
nontoxic materials. The device structure consists of an ultrathin hydrogenated
amorphous silicon (a-Si:H) absorber and metal-oxide layers as selective contacts.
Herein, novel approach is presented to significantly improve device performance,
especially in Voc, by introducing molecular dipoles in the device electron
transport layer. By incorporating polyethyleneimine or poly(amidoamine) G1 and
G2 dipoles, Voc (from 410 mV up to 638 mV) is significantly increased without
sacrificing the average photopic transmittance of the device, leading to a record
efficiency for this particular approach in TPV. Measurements confirm excellent
long-term stability. This approach can potentially allow tuning the work function
of the selective contacts enabling the use of low-cost, earth-abundant materials
that are not optimized for a particular absorber. Furthermore, this solution
circumvents the issue of low Voc by a simple interface treatment.

# metadata.dc.rights[].value
cc-by-nc (c) López García, Alex et al., 2024

# metadata.dc.source[].value
Articles publicats en revistes (Enginyeria Electrònica i Biomèdica)

# metadata.dc.title[].value
Enhanced Selective Contact Behavior in a-Si:H/oxide Transparent Photovoltaic Devices via Dipole Layer Integration