Cirera Hernández, AlbertOlmedo Ferrer, Omar2014-11-242014-11-242014-07https://hdl.handle.net/2445/59961Màster Oficial en Física Avançada, Facultat de Física, Universitat de Barcelona, Curs: 2014, Tutors: Olga Casals i Albert CireraMOS structures have been inkjet printed using silver, hafnium oxide (HfO2) and reduced graphene oxide (rGO). Main drawbacks with inkjet printing and electrospray deposition have been overcome. C-V characteristics of these devices have been measured and common phenomenology has been established. Deviations from known theory as well as technical improvement have been proposed.7 p.application/pdfengcc-by-nc-nd (c) Olmedo Ferrer, Omar, 2014http://creativecommons.org/licenses/by-nc-nd/3.0/es/Metall-òxid-semiconductorsImpressió digitalTreballs de fi de màsterMetal oxide semiconductorsDigital printingMaster's thesesInkjet printing of flexible MOS structures based on graphene and high-k dielectricsinfo:eu-repo/semantics/masterThesisinfo:eu-repo/semantics/openAccess