Soler Vilamitjana, DavidFonrodona Turon, MartaVoz Sánchez, CristóbalBertomeu i Balagueró, JoanAndreu i Batallé, Jordi2013-10-292013-10-2920010040-6090https://hdl.handle.net/2445/47380In this paper, we have presented results on silicon thin films deposited by hot-wire CVD at low substrate temperatures (200 °C). Films ranging from amorphous to nanocrystalline were obtained by varying the filament temperature from 1500 to 1800 °C. A crystalline fraction of 50% was obtained for the sample deposited at 1700 °C. The results obtained seemed to indicate that atomic hydrogen plays a leading role in the obtaining of nanocrystalline silicon. The optoelectronic properties of the amorphous material obtained in these conditions are slightly poorer than the ones observed in device-grade films grown by plasma-enhanced CVD due to a higher hydrogen incorporation (13%).4 p.application/pdfeng(c) Elsevier B.V., 2001SiliciPel·lícules finesNanocristallsDeposició en fase de vaporCèl·lules solarsSiliconThin filmsNanocrystalsVapor-platingSolar cellsinfo:eu-repo/semantics/article1600002013-10-29info:eu-repo/semantics/openAccess