Ramírez Ramírez, Joan ManelBerencén Ramírez, Yonder AntonioFerrarese Lupi, FedericoNavarro Urrios, DanielAnopchenko, AlekseiTengattini, AndreaPrtljaga, NikolaPavesi, LorenzoRivallin, P.Fedeli, Jean-MarcGarrido Fernández, Blas2013-07-122013-07-122012-12-171094-4087https://hdl.handle.net/2445/44746Electrically driven Er3+ doped Si slot waveguides emitting at 1530 nm are demonstrated. Two different Er3+ doped active layers were fabricated in the slot region: a pure SiO2 and a Si-rich oxide. Pulsed polarization driving of the waveguides was used to characterize the time response of the electroluminescence (EL) and of the signal probe transmission in 1 mm long waveguides. Injected carrier absorption losses modulate the EL signal and, since the carrier lifetime is much smaller than that of Er3+ ions, a sharp EL peak was observed when the polarization was switched off. A time-resolved electrical pump & probe measurement in combination with lock-in amplifier techniques allowed to quantify the injected carrier absorption losses. We found an extinction ratio of 6 dB, passive propagation losses of about 4 dB/mm, and a spectral bandwidth > 25 nm at an effective d.c. power consumption of 120 μW. All these performances suggest the usage of these devices as electro-optical modulators.11 p.application/pdfeng(c) Optical Society of America, 2012OptoelectrònicaEnginyeria elèctricaOptoelectronicsElectric engineeringinfo:eu-repo/semantics/article6207792013-07-12info:eu-repo/semantics/openAccess23263121