Muñoz Ramos, DavidVoz Sánchez, CristóbalBlanque, S.Ibarz, D.Bertomeu i Balagueró, JoanAlcubilla González, Ramón2013-10-182013-10-1820090921-5107https://hdl.handle.net/2445/47148In this work we study aluminium laser-fired contacts for intrinsic amorphous silicon layers deposited by Hot-Wire CVD. This structure could be used as an alternative low temperature back contact for rear passivated heterojunction solar cells. An infrared Nd:YAG laser (1064 nm) has been used to locally fire the aluminium through the thin amorphous silicon layers. Under optimized laser firing parameters, very low specific contact resistances (ρc ∼ 10 mΩ cm2) have been obtained on 2.8 Ω cm p-type c-Si wafers. This investigation focuses on maintaining the passivation quality of the interface without an excessive increase in the series resistance of the device.12 p.application/pdfeng(c) Elsevier B.V., 2009Deposició química en fase vaporAluminiCèl·lules solarsLàsersCorrosió i anticorrosiusSemiconductorsChemical vapor depositionAluminumSolar cellsLasersCorrosion and anti-corrosivesSemiconductorsinfo:eu-repo/semantics/article5634982013-10-18info:eu-repo/semantics/openAccess