Navarro Urrios, DanielLebour, YoucefJambois, OlivierGarrido Fernández, BlasPitanti, AlessandroDaldosso, NicolaPavesi, LorenzoCardin, J.Hijazi, K.Khomenkova, L.Gourbilleau, FabriceRizk, Richard2011-01-252011-01-252009-11-06https://hdl.handle.net/2445/15662Optical properties of directly excited erbium (Er3+) ions have been studied in silicon rich silicon oxide materials codoped with Er3+. The spectral dependence of the direct excitation cross section (σdir) of the Er3+ atomic I415/2→I411/2 transition (around 0.98 μm) has been measured by time resolved μ-photoluminescence measurements. We have determined that σdir is 9.0±1.5×10−21 cm2 at 983 nm, at least twice larger than the value determined on a stoichiometric SiO2 matrix. This result, in combination with a measurement of the population of excited Er3+ as a function of the pumping flux, has allowed quantifying accurately the amount of optically active Er3+. This concentration is, in the best of the cases, 26% of the total Er population measured by secondary ion mass spectrometry, which means that only this percentage could provide optical gain in an eventual optical amplifier based on this material.5 p.application/pdfeng(c) American Institute of Physics, 2009Matèria condensadaEspectroscòpiaCristal·lografiaCondensed matterSpectroscopyCrystallographyinfo:eu-repo/semantics/article576831info:eu-repo/semantics/openAccess