Diéguez Barrientos, ÀngelPeiró Martínez, FranciscaCornet i Calveras, AlbertMorante i Lleonart, Joan RamonAlsina, F.Pascual Gainza, Jordi2012-05-032012-05-031996-10-010021-8979https://hdl.handle.net/2445/24797We use transmission electron microscopy to characterize the morphology of InGaP epitaxial layers grown by metal‐organic vapor‐phase epitaxy over misoriented GaAs (001) substrates, with a cutoff angle in a range from 0° to 25°. The occurrence of phase separation and CuPt‐type ordered superstructures has been observed. The most ordered configuration has been found to appear in layers grown on 2° off substrates, and the strength of order decreases with increasing the misorientation angle beyond α=2°. Conversely, whereas the phase separation is less evident in the layer grown at 2°, the sample grown with a misorientation of 25° exhibits the most phase separated configuration. The completion between these two phenomena is discussed depending on the misorientation angle.6 p.application/pdfeng(c) American Institute of Physics, 1996Superfícies (Física)Interfícies (Ciències físiques)Pel·lícules finesSurfaces (Physics)Interfaces (Physical sciences)Thin filmsinfo:eu-repo/semantics/article1942122012-04-20info:eu-repo/semantics/openAccess