Martorell Domenech, JuanSprung, Donald W. L.Morozov, Gregory V.2009-12-282009-12-2820040163-1829https://hdl.handle.net/2445/10534We design optimal band pass filters for electrons in semiconductor heterostructures, under a uniform applied electric field. The inner cells are chosen to provide a desired transmission window. The outer cells are then designed to transform purely incoming or outgoing waves into Bloch states of the inner cells. The transfer matrix is interpreted as a conformal mapping in the complex plane, which allows us to write constraints on the outer cell parameters, from which physically useful values can be obtained.10 p.application/pdfeng(c) The American Physical Society, 2004SemiconductorsTransport d'electronsSemiconductorsElectron transportDesign of electron band pass filters for electrically biased finite superlatticesinfo:eu-repo/semantics/article512021info:eu-repo/semantics/openAccess