Ostos, C.Raymond, OscarSuarez-Almodovar, N.Bueno-Baqués, D.Mestres i Vila, Ma. LourdesSiqueiros, J. M.2013-02-012013-02-0120110021-8979https://hdl.handle.net/2445/33659In this study, (011)-highly oriented Sr, Nb co-doped BiFeO3 (BFO) thin films were successfully grown on SrRuO3/Si substrates by rf-magnetron sputtering. The presence of parasite magnetic phases was ruled out based on the high resolution x-ray diffraction data. BFO films exhibited a columnar-like grain growth with rms surface roughness values of 5.3 nm and average grain sizes of 65-70 nm for samples with different thicknesses. Remanent polarization values (2Pr) of 54 lC cm 2 at room temperature were found for the BFO films with a ferroelectric behavior characteristic of an asymmetric device structure. Analysis of the leakage mechanisms for this structure in negative bias suggests Schottky injection and a dominant Poole-Frenkel trap-limited conduction at room temperature. Oxygen vacancies and Fe3þ/Fe2þ trap centers are consistent with the surface chemical bonding states analysis from x-ray photoelectron spectroscopy data. The (011)-BFO/ SrRuO3/Si film structure exhibits a strong magnetic interaction at the interface between the multiferroic film and the substrate layer where an enhanced ferromagnetic response at 5 K was observed. Zero-field cooled (ZFC) and field cooled (FC) magnetization curves of this film system revealed a possible spin glass behavior at spin freezing temperatures below 30 K depending on the BFO film thickness.8 p.application/pdfeng(c) American Institute of Physics , 2011Pel·lícules finesFerroelectricitatMetall-òxid-semiconductors complementarisEspintrònicaNiobiThin filmsFerroelectricityComplementary metal oxide semiconductorsSpintronicsNiobiuminfo:eu-repo/semantics/article6078162013-02-01info:eu-repo/semantics/openAccess