Frigeri, Paolo AntonioNos Aguilà, OriolCalvo, J. D.Carreras Seguí, PazRoldán Molinero, RubénAntony, AldrinAsensi López, José MiguelBertomeu i Balagueró, Joan2013-10-182019-11-0120101862-6351https://hdl.handle.net/2445/47154The scaling up of the Hot Wire Chemical Vapor Deposition (HW-CVD) technique to large deposition area can be done using a catalytic net of equal spaced parallel filaments. The large area deposition limit is defined as the limit whenever a further increment of the catalytic net area does not affect the properties of the deposited film. This is the case when a dense catalytic net is spread on a surface considerably larger than that of the film substrate. To study this limit, a system able to hold a net of twelve wires covering a surface of about 20 cm x 20 cm was used to deposit amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon over a substrate of 10 cm x 10 cm placed at a filament-substrate distance ranging from 1 to 2 cm. The uniformity of the film thickness d and optical constants, n(x, λ) and α(x,¯hω), was studied via transmission measurements. The thin film uniformity as a function of the filament-substrate distance was studied. The experimental thickness profile was compared with the theoretical result obtained solving the diffusion equations. The optimization of the filament-substrate distance allowed obtaining films with inhomogeneities lower than ±2.5% and deposition rates higher than 1 nm/s and 4.5 nm/s for (μc-Si:H) and (a-Si:H), respectively.4 p.application/pdfeng(c) Wiley-VCH, 2010Cèl·lules solarsDeposició química en fase vaporSiliciPel·lícules finesSolar cellsChemical vapor depositionSiliconThin filmsinfo:eu-repo/semantics/article5743392013-10-18info:eu-repo/semantics/openAccess