Puigdollers i González, JoaquimCifre, J.Polo Trasancos, Ma. del CarmenBertomeu i Balagueró, JoanAndreu i Batallé, JordiLloret, A.2016-05-232016-05-2319950169-4332https://hdl.handle.net/2445/98758P-doped polycrystalline silicon films were deposited over Corning 7059 substrates at a moderate temperature, 330°C, in a hot-wire reactor. The films were obtained from the decomposition of silane and hydrogen (10% SiH 4, 90% H 2) and different amounts of diborane. The structure and morphology of the samples were studied with X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). X-ray diffraction spectra show sharp diffraction peaks corresponding to silicon reflections, and Raman spectra show no evidence of amorphous phases and present a high intensity and narrow peak at 520 cm -1, which is the typical feature of crystalline silicon structure. The efficiency of boron incorporation was studied by secondary ion mass spectrometry (SIMS). The electrical properties of doped samples were also studied.4 p.application/pdfeng(c) Elsevier B.V., 1995Deposició química en fase vaporPel·lícules finesSiliciChemical vapor depositionThin filmsSiliconinfo:eu-repo/semantics/article0957072016-05-12info:eu-repo/semantics/openAccess