Amorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC)

Villar, FernandoAntony, AldrinEscarré i Palou, JordiIbarz, D.Roldán Molinero, RubénStella, MarcoMuñoz Ramos, DavidAsensi López, José MiguelBertomeu i Balagueró, Joan2013-10-182013-10-1820090040-6090https://hdl.handle.net/2445/47155Amorphous silicon n-i-p solar cells have been fabricated entirely by Hot-Wire Chemical Vapour Deposition (HW-CVD) at low process temperature < 150 °C. A textured-Ag/ZnO back reflector deposited on Corning 1737F by rf magnetron sputtering was used as the substrate. Doped layers with very good conductivity and a very less defective intrinsic a-Si:H layer were used for the cell fabrication. A double n-layer (μc-Si:H/a-Si:H) and μc-Si:H p-layer were used for the cell. In this paper, we report the characterization of these layers and the integration of these layers in a solar cell fabricated at low temperature. An initial efficiency of 4.62% has been achieved for the n-i-p cell deposited at temperatures below 150 °C over glass/Ag/ZnO textured back reflector.12 p.application/pdfeng(c) Elsevier B.V., 2009SiliciCèl·lules solarsSemiconductors amorfsDeposició química en fase vaporTemperatures baixesSiliconSolar cellsAmorphous semiconductorsChemical vapor depositionLow temperaturesAmorphous silicon thin film solar cells deposited entirely by Hot-Wire Chemical Vapour Deposition at low temperature (<150 ºC)info:eu-repo/semantics/article5611422013-10-18info:eu-repo/semantics/openAccess