Martorell Domenech, JuanWu, H. (Hua)Sprung, Donald W. L.2009-12-232009-12-2319940163-1829https://hdl.handle.net/2445/10454Systematic trends in the properties of a linear split-gate heterojunction are studied by solving iteratively the Poisson and Schrödinger equations for different gate potentials and temperatures. A two-dimensional approximation is presented that is much simpler in the numerical implementation and that accurately reproduces all significant trends. In deriving this approximation, we provide a rigorous and quantitative basis for the formulation of models that assumes a two-dimensional character for the electron gas at the junction.11 p.application/pdfeng(c) The American Physical Society, 1994Estructura electrònicaPropietats elèctriquesElectronic structureElectric propertiesinfo:eu-repo/semantics/article112448info:eu-repo/semantics/openAccess