Herranz Casabona, GervasiMartínez Perea, BenjaminFontcuberta i Griñó, JosepSánchez Barrera, FlorencioGarcía-Cuenca Varona, María VictoriaFerrater Martorell, CèsarVarela Fernández, Manuel, 1956-2012-05-032012-05-032003-05-150021-8979https://hdl.handle.net/2445/24802We report on the growth and characterization of SrRuO3 single layers and SrRuO3/SrTiO3/SrRuO3 heterostructures grown on SrTiO3(100) substrates. The thickness dependence of the coercivity was determined for these single layers. Heterostructures with barrier thickness tb=1, 2.5, and 4 nm were fabricated, with electrodes having thickness ranging from 10 to 100 nm. The hysteresis loops of heterostructures with tb=2.5¿nm, 4 nm reveal uncoupled magnetic switching of the electrodes. Therefore, these heterostructures can be used for the fabrication of magnetic tunneling junctions.3 p.application/pdfeng(c) American Institute of Physics, 2003HistèresiMagnetismeElèctrodesHysteresisMagnetismElectrodesinfo:eu-repo/semantics/article505960info:eu-repo/semantics/openAccess