Herranz Casabona, GervasiSánchez Barrera, FlorencioMartínez Perea, BenjaminFontcuberta i Griñó, JosepGarcía-Cuenca Varona, María VictoriaFerrater Martorell, CèsarVarela Fernández, Manuel, 1956-2012-05-032012-05-032004-06-010021-8979https://hdl.handle.net/2445/24810We report a systematic study of the low-temperature electrical conductivity in a series of SrRuO3 epitaxial thin films. At relatively high temperature the films display the conventional metallic behavior. However, a well-defined resistivity minimum appears at low temperature. This temperature dependence can be well described in a weak localization scenario: the resistivity minimum arising from the competition of electronic self-interference effects and the normal metallic character. By appropriate selection of the film growth conditions, we have been able to modify the mean-free path of itinerant carriers and thus to tune the relative strength of the quantum effects. We show that data can be quantitatively described by available theoretical models.3 p.application/pdfeng(c) American Institute of Physics, 2004FerromagnetismeConductivitat elèctricaPel·lícules finesFerromagnetismElectric conductivityThin filmsinfo:eu-repo/semantics/article5189362012-04-25info:eu-repo/semantics/openAccess