Berencén Ramírez, Yonder AntonioWutzler, R.Rebohle, L.Hiller, DanielRamírez Ramírez, Joan ManelRodríguez, J. A.Skorupa, WolfgangGarrido Fernández, Blas2013-10-112013-10-112013-09-090003-6951https://hdl.handle.net/2445/46883High optical power density of 0.5 mW/cm2, external quantum efficiency of 0.1%, and population inversion of 7% are reported from Tb+-implanted silicon-rich silicon nitride/oxide light emitting devices. Electrical and electroluminescence mechanisms in these devices were investigated. The excitation cross section for the 543 nm Tb3+ emission was estimated under electrical pumping, resulting in a value of 8.2 × 10−14 cm2, which is one order of magnitude larger than one reported for Tb3+:SiO2 light emitting devices. These results demonstrate the potentiality of Tb+-implanted silicon nitride material for the development of integrated light sources compatible with Si technology.5 p.application/pdfeng(c) American Institute of Physics , 2013DíodesÒpticaFotònicaNanotecnologiaIonsTerres raresSíliceMetall-òxid-semiconductors complementarisDiodesOpticsPhotonicsNanotechnologyIonsRare earthsSilicaComplementary metal oxide semiconductorsinfo:eu-repo/semantics/article6279802013-10-11info:eu-repo/semantics/openAccess