Bibes, ManuelMartínez Benjamin, Joan JosepFontcuberta i Griñó, JosepTrtik, V.Benitez, F.Ferrater Martorell, CèsarSánchez Barrera, FlorencioVarela Fernández, Manuel, 1956-2009-12-292009-12-2919990163-1829https://hdl.handle.net/2445/10640The magnetoresistance across interfaces in the itinerant ferromagnetic oxide SrRuO3 have been studied. To define appropriately the interfaces, epitaxial thin films have been grown on bicrystalline and laser-patterned SrTiO3 substrates. Comparison is made with results obtained on similar experiments using the double-exchange ferromagnetic oxide La2/3Sr1/3MnO3. It is found that in SrRuO3, interfaces induce a substantial negative magnetoresistance, although no traces of the low-field spin tunneling magnetoresistance are found. We discuss these results on the basis of the distinct degree of spin polarization in ruthenates and manganites and the different nature of the surface magnetic layer formed at interfaces.4 p.application/pdfeng(c) The American Physical Society, 1999MaterialsPropietats magnètiquesMagnetic properties and materialsElectronic transport in condensed matterElectronic structure and electrical properties of surfacesMagnetoresistance at artificial interfaces in the itinerant SrRuO3 ferromagnetinfo:eu-repo/semantics/article150617info:eu-repo/semantics/openAccess