Murillo, GonzaloLeón-Salguero, EdgardoMartínez-Alanis, Paulina R.Esteve Tintó, JaumeAlvarado-Rivera, JosefinaGüell Vilà, Frank2019-10-102021-04-062019-04-062211-2855https://hdl.handle.net/2445/142071This work reports the study of the processes behind the growth of two-dimensional (2D) n-doped ZnO nanostructures on an AlN layer. We have demonstrated that AlN undergoes a slow dissociation process due to the basic controlled environment promoted by the hexamethylenetetramine (HMTA). The Al(OH)4- ions created inhibits the growth along the c-axis, effectively promoting the fast formation of a planar geometry selectively grown on top of the AlN layer. With the use of this promoting layer and a standard hydrothermal method, a selective area growth is observed with micrometric resolution. In addition, by using several advanced characterization techniques such as, X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS/EDX), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL), we observed a resulting doping with aluminum of the ZnO nanostructures, occupying substitutional and interstitial sites, that could lead to new promising applications. These high-quality n-doped ZnO nanosheets (NSs) exhibit strong ultraviolet emission in the 385-405 nm region without broad deep level emission. The piezoelectric nature of these nanostructures has been demonstrated by using piezoresponse atomic force microscope (PFM) and with the support of a piezoelectric test device. Therefore, this low-cost and fast selective-area synthesis of 2D n-doped ZnO NSs can be applicable to other aluminum based materials and paves the way to new promising applications, such as bioelectronic applications, energy generation or self-powered sensing10 p.application/pdfengcc-by-nc-nd (c) Elsevier, 2019http://creativecommons.org/licenses/by-nc-nd/3.0/esAluminiÒxid de zincNanocristallsAluminumZinc oxideNanocrystalsinfo:eu-repo/semantics/article6919732019-10-10info:eu-repo/semantics/openAccess