Hernández Ramírez, FranciscoTarancón Rubio, AlbertCasals Guillén, OlgaPellicer Vilà, Eva M. (Eva Maria)Rodríguez, J.Romano Rodríguez, AlbertMorante i Lleonart, Joan RamonBarth, SvenMathur, Sanjay2009-12-292009-12-2920070163-1829https://hdl.handle.net/2445/10632A simple and useful experimental alternative to field-effect transistors for measuring electrical properties free electron concentration nd, electrical mobility , and conductivity in individual nanowires has been developed. A combined model involving thermionic emission and tunneling through interface states is proposed to describe the electrical conduction through the platinum-nanowire contacts, fabricated by focused ion beam techniques. Current-voltage I-V plots of single nanowires measured in both two- and four-probe configurations revealed high contact resistances and rectifying characteristics. The observed electrical behavior was modeled using an equivalent circuit constituted by a resistance placed between two back-to-back Schottky barriers, arising from the metal-semiconductor-metal M-S-M junctions. Temperature-dependent I-V measurements revealed effective Schottky barrier heights up to BE= 0.4 eV.5 p.application/pdfeng(c) The American Physical Society, 2007SuperconductivitatEspintrònicaSuperconductivityElectronic structure and electrical properties of surfacesinfo:eu-repo/semantics/article553766info:eu-repo/semantics/openAccess