Pérez Murano, FrancescAbadal, G.Barniol i Beumala, NúriaAymerich Humet, XavierServat, J.Gorostiza Langa, Pablo IgnacioSanz Carrasco, Fausto2012-05-022012-05-021995-12-010021-8979https://hdl.handle.net/2445/24743The nanometer¿scale oxidation of Si(100) surfaces in air is performed with an atomic force microscope working in tapping mode. Applying a positive voltage to the sample with respect to the tip, two kinds of modifications are induced on the sample: grown silicon oxide mounds less than 5 nm high and mounds higher than 10 nm (which are assumed to be gold depositions). The threshold voltage necessary to produce the modification is studied as a function of the average tip¿to¿sample distance.5 p.application/pdfeng(c) American Institute of Physics, 1995Microscòpia de força atòmicaSiliciNanoelectrònicaDetectorsCamps elèctricsAtomic force microscopySiliconNanoelectronicsDetectorsElectric fieldsinfo:eu-repo/semantics/article1058692012-04-25info:eu-repo/semantics/openAccess