Jambois, OlivierGourbilleau, FabriceKenyon, Anthony J.Montserrat i Martí, JosepRizk, RichardGarrido Fernández, Blas2011-01-252011-01-252010-01-201094-4087https://hdl.handle.net/2445/15726This study reports the estimation of the inverted Er fraction in a system of Er doped silicon oxide sensitized by Si nanoclusters, made by magnetron sputtering. Electroluminescence was obtained from the sensitized erbium, with a power efficiency of 10¿2 %. By estimating the density of Er ions that are in the first excited state, we find that up to 20% of the total Er concentration is inverted in the best device, which is one order of magnitude higher than that achieved by optical pumping of similar materials.6 p.application/pdfeng(c) Optical Society of America, 2010Terres raresSemiconductorsPropietats òptiquesAmplificadors (Electrònica)SemiconductorsOptical propertiesAmplifiers (Electronics)info:eu-repo/semantics/article585172info:eu-repo/semantics/openAccess