Roura Grabulosa, PereLópez de Miguel, ManuelCornet i Calveras, AlbertMorante i Lleonart, Joan Ramon2012-05-032012-05-031997-05-150021-8979https://hdl.handle.net/2445/24784A series of InxAl12xAs samples (0.51,x,0.55) coherently grown on InP was studied in order to measure the band-gap energy of the lattice matched composition. As the substrate is opaque to the relevant photon energies, a method is developed to calculate the optical absorption coefficient from the photoluminescence excitation spectra. The effect of strain on the band-gap energy has been taken into account. For x50.532, at 14 K we have obtained Eg05154966 meV. © 1997 American Institute of Physics.5 p.application/pdfeng(c) American Institute of Physics, 1997Microscòpia electrònicaPel·lícules finesElectron microscopyThin filmsinfo:eu-repo/semantics/article115846info:eu-repo/semantics/openAccess