Martorell Domenech, JuanSprung, Donald W. L.2009-12-242009-12-2419960163-1829https://hdl.handle.net/2445/10466An efficient method is developed for an iterative solution of the Poisson and Schro¿dinger equations, which allows systematic studies of the properties of the electron gas in linear deep-etched quantum wires. A much simpler two-dimensional (2D) approximation is developed that accurately reproduces the results of the 3D calculations. A 2D Thomas-Fermi approximation is then derived, and shown to give a good account of average properties. Further, we prove that an analytic form due to Shikin et al. is a good approximation to the electron density given by the self-consistent methods.11 p.application/pdfeng(c) The American Physical Society, 1996Superfícies (Física)SemiconductorsPropietats elèctriquesSurfaces (Physics)SemiconductorsElectric propertiesinfo:eu-repo/semantics/article146885info:eu-repo/semantics/openAccess