Saboundji, A.Coulon, N.Gorin, A.Lhermite, H.Mohammed-Brahim, T.Fonrodona Turon, MartaBertomeu i Balagueró, JoanAndreu i Batallé, Jordi2013-10-312013-10-3120050040-6090https://hdl.handle.net/2445/47424N-type as well P-type top-gate microcrystalline silicon thin film transistors (TFTs) are fabricated on glass substrates at a maximum temperature of 200 °C. The active layer is an undoped μc-Si film, 200 nm thick, deposited by Hot-Wire Chemical Vapor. The drain and source regions are highly phosphorus (N-type TFTs) or boron (P-type TFTs)-doped μc-films deposited by HW-CVD. The gate insulator is a silicon dioxide film deposited by RF sputtering. Al-SiO 2-N type c-Si structures using this insulator present low flat-band voltage,-0.2 V, and low density of states at the interface D it=6.4×10 10 eV -1 cm -2. High field effect mobility, 25 cm 2/V s for electrons and 1.1 cm 2/V s for holes, is obtained. These values are very high, particularly the hole mobility that was never reached previously.6 p.application/pdfeng(c) Elsevier B.V., 2005TransistorsSemiconductorsSiliciTemperatures baixesTransistorsSemiconductorsSiliconLow temperaturesinfo:eu-repo/semantics/article5251902013-10-31info:eu-repo/semantics/openAccess