Alay, Josep LluísHirose, M.2012-10-082012-10-0819970021-8979https://hdl.handle.net/2445/32224High resolution x-ray photoelectron spectroscopy has been used to determine the valence band alignment at ultrathin SiO2/Si interfaces. In the oxide thickness range 1.6-4.4 nm the constant band-offset values of 4.49 and 4.43 eV have been obtained for the dry SiO2/Si(100) and the wet SiO2/Si(100) interfaces, respectively. The valence band alignment of dry SiO2/Si(111) (4.36 eV) is slightly smaller than the case of the dry SiO2/Si(100) interface.3 p.application/pdfeng(c) American Institute of Physics , 1997SemiconductorsInterfícies (Ciències físiques)SemiconductorsInterfaces (Physical sciences)info:eu-repo/semantics/article5675252012-10-08info:eu-repo/semantics/openAccess