Vilà i Arbonès, Anna MariaVergara Cruz, Jorge Carlos2014-11-172014-11-172014-09https://hdl.handle.net/2445/59730Treballs Finals de Grau de Física, Facultat de Física, Universitat de Barcelona, Any: 2014, Tutora: Anna Vilà ArbonesThe synthesis through a simple chemical route of SnO powder was successfully done. By using a home-made Hall-effect setup, its p-type behaviour is confirmed, showing high hole mobility around 102 cm2·V-1·s-1 and low resistivity ρ=6.52 Ω·m. Moreover the powder exhibits an interesting behaviour with the temperature changing its conformation to SnO2 that is n-type semiconductor.4 p.application/pdfengcc-by-nc-nd (c) Vergara Cruz, 2014http://creativecommons.org/licenses/by-nc-nd/3.0/es/SemiconductorsCristallsTreballs de fi de grauSemiconductorsCrystalsBachelor's thesesPreparation and characterization of tin (II) oxide powder as p-type semiconductor for its deposition by ink jet printinginfo:eu-repo/semantics/bachelorThesisinfo:eu-repo/semantics/openAccess