González, T.Bulashenko, OlegMateos López, JavierPardo, D.Reggiani, L. (Lino), 1941-2010-01-262010-01-2619970163-1829https://hdl.handle.net/2445/10911We present a microscopic analysis of shot-noise suppression due to long-range Coulomb interaction in semiconductor devices under ballistic transport conditions. An ensemble Monte Carlo simulator self-consistently coupled with a Poisson solver is used for the calculations. A wide range of injection-rate densities leading to different degrees of suppression is investigated. A sharp tendency of noise suppression at increasing injection densities is found to scale with a dimensionless Debye length related to the importance of space-charge effects in the structure.4 p.application/pdfeng(c) The American Physical Society, 1997Transport d'electronsSoroll electrònicSemiconductorsMètode de MontecarloElectron transportElectronic noiseSemiconductorsMonte Carlo methodinfo:eu-repo/semantics/article517057info:eu-repo/semantics/openAccess