Álvarez García, JacoboPérez Rodríguez, AlejandroRomano Rodríguez, AlbertMorante i Lleonart, Joan RamonCalvo Barrio, LorenzoScheer, RolandKlenk, R.2012-05-082012-05-082001-010734-2101https://hdl.handle.net/2445/25048The microstructure of CuInS2-(CIS2) polycrystalline films deposited onto Mo-coated glass has been analyzed by Raman scattering, Auger electron spectroscopy (AES), transmission electron microscopy, and x-ray diffraction techniques. Samples were obtained by a coevaporation procedure that allows different Cu-to-In composition ratios (from Cu-rich to Cu-poor films). Films were grown at different temperatures between 370 and 520-°C. The combination of micro-Raman and AES techniques onto Ar+-sputtered samples has allowed us to identify the main secondary phases from Cu-poor films such as CuIn5S8 (at the central region of the layer) and MoS2 (at the CIS2/Mo interface). For Cu-rich films, secondary phases are CuS at the surface of as-grown layers and MoS2 at the CIS2/Mo interface. The lower intensity of the MoS2 modes from the Raman spectra measured at these samples suggests excess Cu to inhibit MoS2 interface formation. Decreasing the temperature of deposition to 420-°C leads to an inhibition in observing these secondary phases. This inhibition is also accompanied by a significant broadening and blueshift of the main A1 Raman mode from CIS2, as well as by an increase in the contribution of an additional mode at about 305 cm-1. The experimental data suggest that these effects are related to a decrease in structural quality of the CIS2 films obtained under low-temperature deposition conditions, which are likely connected to the inhibition in the measured spectra of secondary-phase vibrational modes.8 p.application/pdfeng(c) American Institute of Physics, 2001MicroestructuraCèl·lules solarsSemiconductorsPel·lícules finesElectrònica quànticaMicrostructureSolar cellsSemiconductorsThin filmsQuantum electronicsinfo:eu-repo/semantics/article183687info:eu-repo/semantics/openAccess