Izquierdo Roca, VictorPérez Rodríguez, AlejandroRomano Rodríguez, AlbertMorante i Lleonart, Joan RamonÁlvarez García, JacoboCalvo Barrio, LorenzoBermudez, V.Grand, P. P.Ramdani, O.Parissi, L.Kerrec, O.2012-05-032012-05-032007-05-220021-8979https://hdl.handle.net/2445/24888This article reports a detailed Raman scattering and microstructural characterization of S-rich CuIn(S,Se)2 absorbers produced by electrodeposition of nanocrystalline CuInSe2 precursors and subsequent reactive annealing under sulfurizing conditions. Surface and in-depth resolved Raman microprobe measurements have been correlated with the analysis of the layers by optical and scanning electron microscopy, x-ray diffraction, and in-depth Auger electron spectroscopy. This has allowed corroboration of the high crystalline quality of the sulfurized layers. The sulfurizing conditions used also lead to the formation of a relatively thick MoS2 intermediate layer between the absorber and the Mo back contact. The analysis of the absorbers has also allowed identification of the presence of In-rich secondary phases, which are likely related to the coexistence in the electrodeposited precursors of ordered vacancy compound domains with the main chalcopyrite phase, in spite of the Cu-rich conditions used in the growth. This points out the higher complexity of the electrodeposition and sulfurization processes in relation to those based in vacuum deposition techniques.8 p.application/pdfeng(c) American Institute of Physics, 2007Ciència dels materialsPropietats òptiquesMaterials scienceOptical propertiesinfo:eu-repo/semantics/article553860info:eu-repo/semantics/openAccess