Partial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InP

Peiró Martínez, FranciscaCornet i Calveras, AlbertMorante i Lleonart, Joan Ramon2012-05-022012-05-021995-05-150021-8979https://hdl.handle.net/2445/24742The morphology of compressive InxGa1−xAs/In0.52Al0.48As layers grown on (100)‐InP substrates by molecular beam epitaxy was observed by transmission electron microscopy. A preliminary analysis of the network of misfit dislocations at the interface in layers with a thickness of 0.5 μm and xIn between 54% and 63% led to a further study of the onset of stress relaxation for layers with composition xIn=60% and thickness ranging from 5 to 25 nm. A critical thickness was found for plastic relaxation at 20 nm<tc<25 nm. Following a model of excess stress, a mechanism for the nucleation of dislocations according to the sequence 90°partial→60°perfect→30°partial is proposed.4 p.application/pdfeng(c) American Institute of Physics, 1995Microscòpia electrònicaSemiconductorsElectron microscopySemiconductorsPartial and perfect dislocation nucleation at the onset of stress relaxation in In0.60Ga0.40As active layers of high mobility transistors grown on InPinfo:eu-repo/semantics/article93635info:eu-repo/semantics/openAccess