Polo Trasancos, Ma. del CarmenPeiró Martínez, FranciscaCifre, J.Bertomeu i Balagueró, JoanPuigdollers i González, JoaquimAndreu i Batallé, Jordi2016-06-082016-06-0819950951-3248https://hdl.handle.net/2445/99362Polycrystalline silicon (poly-Si) films were obtained at moderate temperatures (280-500ºC) from a mixture of silane and hydrogen in a hot wire CVD reactor. SEM and TEM results revealed a columnar growth of poly-Si grains with a preferential orientation of the crystals perpendicular to the substrate along the [110] direction. Plain view examinations along the [110] axis revealed a needled shape of the crystals 0.3-1 µm) with the largest axis randomly distributed on the plane. The high quality of the polycrystalline samples obtained makes the hot-wire technique very promising.4 p.application/pdfengcc-by (c) Polo Trasancos, Ma. del Carmen et al., 1995http://creativecommons.org/licenses/by/3.0/esSiliciDeposició química en fase vaporPel·lícules finesCreixement cristal·líSiliconChemical vapor depositionThin filmsCrystal growthinfo:eu-repo/semantics/article1195002016-06-08info:eu-repo/semantics/openAccess