Berencén Ramírez, Yonder AntonioJambois, OlivierRamírez Ramírez, Joan ManelRebled, J. M. (José Manuel)Estradé Albiol, SòniaPeiró Martínez, FranciscaDomínguez, Carlos (Domínguez Horna)Rodríguez, J. A.Garrido Fernández, Blas2012-10-052012-10-0520110146-9592https://hdl.handle.net/2445/32211Blue green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at 1000 °C. Transmission electron microscopy and EL studies allowed ascribing the blue-green emission to the Si nitride related defects and the near-IR band with the emission of the Si-nanoclusters embedded into the SiO2 layer. Charge transport analysis is reported and allows for identifying the origin of this twowavelength switching effect.3 p.application/pdfeng(c) Optical Society of America, 2011MicroelectrònicaMetall-òxid-semiconductorsLuminescènciaOptoelectrònicaMicroelectronicsMetal oxide semiconductorsLuminescenceOptoelectronicsinfo:eu-repo/semantics/article5968532012-10-05info:eu-repo/semantics/openAccess