Bulashenko, OlegGaubert, P.Varani, L.Vaissiere, J. C.Nougier, J. P.2012-02-162012-02-1620000021-8979https://hdl.handle.net/2445/22099A theoretical model for the noise properties of n+nn+ diodes in the drift-diffusion framework is presented. In contrast with previous approaches, our model incorporates both the drift and diffusive parts of the current under inhomogeneous and hot-carrier conditions. Closed analytical expressions describing the transport and noise characteristics of submicrometer n+nn+ diodes, in which the diode base (n part) and the contacts (n+ parts) are coupled in a self-consistent way, are obtained8 p.application/pdfeng(c) American Institute of Physics, 2000DíodesSorollCamps elèctricsSemiconductorsMètode de MontecarloElectrònica de l'estat sòlidMicroelectrònicaDiodesNoiseElectric fieldsSemiconductorsMonte Carlo methodSolid state electronicsMicroelectronicsinfo:eu-repo/semantics/article517048info:eu-repo/semantics/openAccess