Georgakilas, AlexanderChristou, ArisZekentes, KonstantinosMercy, J. M.Konczewic, L. K.Vilà i Arbonès, Anna MariaCornet i Calveras, Albert2012-05-022012-05-021994-07-010021-8979https://hdl.handle.net/2445/24723Electrical transport in a modulation doped heterostructure of In0.53Ga0.47As/In0.52Al0.48As grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov¿De Haas oscillations were observed indicating the two¿dimensional character of electron transport. A mobility of 20¿000 cm2/V¿s was measured at 6 K for an electron sheet concentration of 1.7×1012 cm¿2. Transmission electron microscopy observations indicated a significant surface roughness and high defect density of the InGaAs/InAlAs layers to be present due to the growth on silicon. In addition, fine¿scale composition modulation present in the In0.53Ga0.47As/In0.52Al0.48As may further limit transport properties.3 p.application/pdfeng(c) American Institute of Physics, 1994Camps magnèticsNanotecnologiaMagnetic fieldsNanotechnologyinfo:eu-repo/semantics/article91318info:eu-repo/semantics/openAccess