Puigdollers i González, JoaquimOrpella, AlbertDosev, D.Voz Sánchez, CristóbalPallarés Curto, JordiMarsal Garví, Lluís F. (Lluís Francesc)Bertomeu i Balagueró, JoanAndreu i Batallé, JordiAlcubilla González, RamónPeiró, D.2013-10-312013-10-3120000022-3093https://hdl.handle.net/2445/47417Hydrogenated microcrystalline silicon films obtained at low temperature (150-280°C) by hot wire chemical vapour deposition at two different process pressures were measured by Raman spectroscopy, X-ray diffraction (XRD) spectroscopy and photothermal deflection spectroscopy (PDS). A crystalline fraction >90% with a subgap optical absortion 10 cm -1 at 0.8 eV were obtained in films deposited at growth rates >0.8 nm/s. These films were incorporated in n-channel thin film transistors and their electrical properties were measured. The saturation mobility was 0.72 ± 0.05 cm 2/ V s and the threshold voltage around 0.2 eV. The dependence of their conductance activation energies on gate voltages were related to the properties of the material.15 p.application/pdfeng(c) Elsevier B.V., 2000SiliciPel·lícules finesTransistorsDeposició química en fase vaporTemperatures baixesSemiconductors amorfsSiliconThin filmsTransistorsChemical vapor depositionLow temperaturesAmorphous semiconductorsinfo:eu-repo/semantics/article1478082013-10-31info:eu-repo/semantics/openAccess