Ramírez Ramírez, Joan ManelJambois, OlivierBerencén Ramírez, Yonder AntonioNavarro Urrios, DanielAnopchenko, AlekseiMarconi, AlessandroPrtljaga, NikolaDaldosso, NicolaPavesi, LorenzoColonna, Jean-PhilippeFedeli, Jean-MarcGarrido Fernández, Blas2012-10-262012-10-262011-12-050921-5107https://hdl.handle.net/2445/32396We present a electroluminescence (EL) study of the Si-rich silicon oxide (SRSO) LEDs with and without Er3+ ions under different polarization schemes: direct current (DC) and pulsed voltage (PV). The power efficiency of the devices and their main optical limitations are presented. We show that under PV polarization scheme, the devices achieve one order of magnitude superior performance in comparison with DC. Time-resolved measurements have shown that this enhancement is met only for active layers in which annealing temperature is high enough (>1000 ◦C) for silicon nanocrystal (Si-nc) formation. Modeling of the system with rate equations has been done and excitation cross-sections for both Si-nc and Er3+ ions have been extracted.5 p.application/pdfeng(c) Elsevier B.V., 2011Nanocristalls semiconductorsSiliciMetall-òxid-semiconductors complementarisFotònicaSemiconductor nanocrystalsSiliconComplementary metal oxide semiconductorsPhotonicsinfo:eu-repo/semantics/article5992842012-10-26info:eu-repo/semantics/openAccess