Roura Grabulosa, PereCosta i Balanzat, JosepMorante i Lleonart, Joan RamonBertrán Serra, Enric2012-05-032012-05-031997-04-010021-8979https://hdl.handle.net/2445/24823The quenching of the photoluminescence of Si nanopowder grown by plasma-enhanced chemical vapor deposition due to pressure was measured for various gases ( H2, O2, N2, He, Ne, Ar, and Kr) and at different temperatures. The characteristic pressure, P0, of the general dependence I(P) = I0¿exp(¿P/P0) is gas and temperature dependent. However, when the number of gas collisions is taken as the variable instead of pressure, then the quenching is the same within a gas family (mono- or diatomic) and it is temperature independent. So it is concluded that the effect depends on the number of gas collisions irrespective of the nature of the gas or its temperature.4 p.application/pdfeng(c) American Institute of Physics, 1997Propietats òptiquesMatèria condensadaOptical propertiesCondensed matterinfo:eu-repo/semantics/article523204info:eu-repo/semantics/openAccess