Tello, P. G.Castaño, F. J.O'Handley, Robert C., 1942-Allen, Samuel M.Esteve, M.Labarta, AmílcarBatlle Gelabert, Xavier2012-02-162012-02-1620020021-8979https://hdl.handle.net/2445/22088Polycrystalline Ni-Mn-Ga thin films have been deposited by the pulsed laser deposition (PLD) technique, using slices of a Ni-Mn-Ga single crystal as targets and onto Si (100) substrates at temperatures ranging from 673 K up to 973 K. Off-stoichiometry thin films were deposited at a base pressure of 1×10-6-Torr or in a 5 mTorr Ar atmosphere. Samples deposited in vacuum and temperatures above 823 K are magnetic at room temperature and show the austenitic {220} reflection in their x-ray diffraction patterns. The temperature dependences of both electrical resistance and magnetic susceptibility suggest that these samples exhibit a structural martensitic transition at around 260 K. The magnetoresistance ratio at low temperature can be as high as 1.3%, suggesting the existence of a granular structure in the films3 p.application/pdfengThin films(c) American Institute of Physics, 2002Pel·lícules finesCristal·lografiaCiència dels materialsLàsersMicroelectrònicaCrystallographyMaterials scienceLasersMicroelectronicsinfo:eu-repo/semantics/article193462info:eu-repo/semantics/openAccess