Frieiro Castro, Juan LuisBlázquez Gómez, Josep OriolLópez Vidrier, JuliàLópez Conesa, LluísEstradé Albiol, SòniaPeiró Martínez, FranciscaIbáñez i Insa, JordiHernández Márquez, SergiGarrido Fernández, Blas2020-05-162020-05-162017-10-181862-6300https://hdl.handle.net/2445/160757In this work, the fabrication and the structural, optical and electrical properties of Al-Tb/SiO2 nanomultilayers have been studied. The nanomultilayers were deposited by means of electron beam evaporation on top of p-type Si substrates. Optical characterization shows a narrow and strong emission in the green spectral range, indicating the optical activation of Tb3+ ions. The electrical characteriza-tion revealed conduction limited by the electrode, although trapped-assisted mechanisms can also contribute to transport. The electroluminescence analysis revealed also emission from Tb3+ ions, yielded promising results to in-clude this material in future optoelectronics applications as integrated emitting devices.application/pdfeng(c) Wiley-VCH, 2017Metall-òxid-semiconductorsLuminescènciaOptoelectrònicaMetal oxide semiconductorsLuminescenceOptoelectronicsinfo:eu-repo/semantics/article6741062020-05-16info:eu-repo/semantics/openAccess