Perálvarez Barrera, Mariano JoséCarreras, JosepBarreto, JorgeMorales, A. (Ángel)Domínguez, Carlos (Domínguez Horna)Garrido Fernández, Blas2011-01-252011-01-252008-06-171077-3118https://hdl.handle.net/2445/15725We report on a field-effect light emitting device based on silicon nanocrystals in silicon oxide deposited by plasma-enhanced chemical vapor deposition. The device shows high power efficiency and long lifetime. The power efficiency is enhanced up to 0.1 %25 by the presence of a silicon nitride control layer. The leakage current reduction induced by this nitride buffer effectively increases the power efficiency two orders of magnitude with regard to similarly processed devices with solely oxide. In addition, the nitride cools down the electrons that reach the polycrystalline silicon gate lowering the formation of defects, which significantly reduces the device degradation.3 p.application/pdfeng(c) American Institute of Physics, 2008MicroelectrònicaSemiconductorsMicroelectronicsSemiconductorsinfo:eu-repo/semantics/article585157info:eu-repo/semantics/openAccess