Roura Grabulosa, PereBosch Estrada, JoséMorante i Lleonart, Joan Ramon2009-10-282009-10-2819920163-1829https://hdl.handle.net/2445/9848Optical-absorption measurements have been carried out on tensile and compressive In x Ga 1 − x As/InP strained layers. It is shown that the energetic dispersion of the heavy-hole relative to the light-hole subband σ HH / σ LH is the key to knowing the origin of the microscopic inhomogeneities. So, σ HH / σ LH <1 indicates the existence of composition inhomogeneities whereas σ HH / σ LH =2.8 reveals an inhomogeneous strain field.4 p.application/pdfeng(c) The American Physical Society, 1992Electrònica de l'estat sòlidPropietats òptiquesLuminescènciaSemiconductorsMicroscòpia electrònica de transmissióSolid state electronicsOptical propertiesPhotoluminescenceSemiconductorsTransmission electron microscopyinfo:eu-repo/semantics/article71200info:eu-repo/semantics/openAccess