Voz Sánchez, CristóbalPeiró, D.Fonrodona Turon, MartaSoler Vilamitjana, DavidBertomeu i Balagueró, JoanAndreu i Batallé, Jordi2013-10-252013-10-2520000927-0248https://hdl.handle.net/2445/47286Undoped hydrogenated microcrystalline silicon was obtained by hot-wire chemical vapour deposition at different silane-to-hydrogen ratios and low temperature (<300 °C). As well as technological aspects of the deposition process, we report structural, optical and electrical characterizations of the samples that were used as the active layer for preliminary p-i-n solar cells. Raman spectroscopy indicates that changing the hydrogen dilution can vary the crystalline fraction. From electrical measurements an unwanted n-type character is deduced for this undoped material. This effect could be due to a contaminant, probably oxygen, which is also observed in capacitance-voltage measurements on Schottky structures. The negative effect of contaminants on the device was dramatic and a compensated p-i-n structure was also deposited to enhance the cell performance.21 p.application/pdfeng(c) Elsevier B.V., 2000SiliciNanocristallsDeposició química en fase vaporCèl·lules solarsSiliconNanocrystalsChemical vapor depositionSolar cellsinfo:eu-repo/semantics/article1491712013-10-25info:eu-repo/semantics/openAccess