Breymesser, A.Schlosser, V.Peiró, D.Voz Sánchez, CristóbalBertomeu i Balagueró, JoanAndreu i Batallé, JordiSummhammer, J.2016-05-062016-05-0620010927-0248https://hdl.handle.net/2445/98399Work function measurements on cross-sectioned microcrystalline pin silicon solar cells deposited by Hot-Wire CVD are presented. The experiment is realized by combining a modified Kelvin probe experiment and a scanning force microscope. The measured surface potential revealed that the built-in electric drift field is weak in the middle of the compensated intrinsic layer. A graded donor distribution and a constant boron compensation have to be assumed within the intrinsic layer in order to obtain coincidence of the measurements and simulations. The microcrystalline p-silicon layer and the n-type transparent conducting oxide form a reverse polarized diode in series with the pin diode.7 p.application/pdfeng(c) Elsevier B.V., 2001SiliciDeposició química en fase vaporCèl·lules solarsSiliconChemical vapor depositionSolar cellsinfo:eu-repo/semantics/article1478102016-05-06info:eu-repo/semantics/openAccess