Electrically active point defects in n-type 4H¿SiC

Doyle, J. P.Linnarsson, M. K.Pellegrino, PaoloKeskitalo, N.Svensson, Bengt G.Schoner, A.Nordell, N.Lindstrom, J. L.2012-05-032012-05-031998-08-010021-8979https://hdl.handle.net/2445/24815An electrically active defect has been observed at a level position of ∼ 0.70 eV below the conduction band edge (Ec) with an extrapolated capture cross section of ∼ 5×10−14 cm2 in epitaxial layers ..4 p.application/pdfeng(c) American Institute of Physics, 1998Estructura electrònicaCristal·lografiaElectronic structureCrystallographyElectrically active point defects in n-type 4H¿SiCinfo:eu-repo/semantics/article5218302012-04-20info:eu-repo/semantics/openAccess