Gomila Lluch, GabrielBulashenko, OlegRubí Capaceti, José MiguelKochelap, V. A. (Viacheslav Aleksandrovich)2012-02-162012-02-1619980021-8979https://hdl.handle.net/2445/22078We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration9 p.application/pdfeng(c) American Institute of Physics, 1998SemiconductorsSoroll electrònicDíodesTransistorsCamps elèctricsMicroelectrònicaSemiconductorsElectronic noiseDiodesTransistorsElectric fieldsMicroelectronicsinfo:eu-repo/semantics/article143475info:eu-repo/semantics/openAccess